vishay siliconix SI8499DB document number: 65906 s10-0543-rev. a, 08-mar-10 www.vishay.com 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? ultra-small 1.5 mm x 1 mm maximum outline ? ultra-thin 0.59 maximum height ? compliant to rohs directive 2002/95/ec applications ? low on-resistance load switch, charger switch and battery switch for portable devices - low power consumption - increased battery life product summary v ds (v) r ds(on) ( ) i d (a) e q g (typ.) - 20 0.032 at v gs = - 4.5 v - 16 14.5 nc 0.046 at v gs = - 2.5 v - 14.3 0.065 at v gs = - 2.0 v - 12 0.120 at v gs = - 1.8 v - 2.5 micro foot device markin g : 8 499 xxx = date/lot tracea b ility code orderin g information: si 8 499db-t2-e1 (lead (p b )-free and halogen-free) dd ss sg 1 2 6 3 5 4 b u mp side v ie w 8 499 xxx backside v ie w s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. refer to ipc/jedec (j-std- 020c), no manual or hand soldering. d. case is defined as the top surface of the package. e. based on t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 16 a t c = 70 c - 13.7 t a = 25 c - 7.8 a, b t a = 70 c - 6.3 a, b pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 10.8 t a = 25 c - 2.3 a, b maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.77 a, b t a = 70 c 1.77 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c package reflow conditions c ir/convection 260 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number: 65906 s10-0543-rev. a, 08-mar-10 vishay siliconix SI8499DB notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 85 c/w. c. case is defined as top surface of the package. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b r thja 37 45 c/w maximum junction-to-case (drain) steady state r thjc 79.5 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 20 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.5 - 1.3 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 70 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 5 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 1.5 a 0.026 0.032 v gs = - 2.5 v, i d = - 1.5 a 0.036 0.046 v gs = - 2.0 v, i d = - 1 a 0.048 0.065 v gs = - 1.8 v, i d = - 0.5 a 0.060 0.120 forward transconductance a g fs v ds = - 10 v, i d = - 1.5 a 10 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 1300 pf output capacitance c oss 250 reverse transfer capacitance c rss 200 total gate charge q g v ds = - 10 v, v gs = - 5 v, i d = - 1.5 a 20 30 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 1.5 a 14.5 22 gate-source charge q gs 2.0 gate-drain charge q gd 4.1 gate resistance r g v gs = - 0.1 v, f = 1 mhz 7 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 6.7 i d ? - 1.5 a, v gen = - 4.5 v, r g = 1 20 40 ns rise time t r 25 50 turn-off delay time t d(off) 50 100 fall time t f 30 60 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 6.7 i d ? - 1.5 a, v gen = - 10 v, r g = 1 715 rise time t r 10 20 turn-off delay time t d(off) 55 110 fall time t f 30 60 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 65906 s10-0543-rev. a, 08-mar-10 www.vishay.com 3 vishay siliconix SI8499DB notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 10.8 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 1.5 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 1.5 a, di/dt = 100 a/s, t j = 25 c 40 80 ns body diode reverse recovery charge q rr 22 45 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 25 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number: 65906 s10-0543-rev. a, 08-mar-10 vishay siliconix SI8499DB typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5vthru2.5v v gs =1.5v v gs =2v v gs =1v v ds - drain-to-source voltage (v) - drain current (a) i d 0.00 0.05 0.10 0.15 0.20 0 5 10 15 20 v gs =2v v gs =4.5v v gs =1.8v v gs =2.5v - on-resistance ( ) r ds(on) i d - drain current (a) 0 2 4 6 8 10 0 5 10 15 20 25 30 i d =1.5a v ds =10v v ds =5v v ds =16v - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 t c = 25 c t c =125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d c rss 0 400 800 1200 1600 2000 048121620 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 v gs =1.8v;i d =0.5a v gs =2v; v gs =4.5v;i d =1a t j - junction temperature (c) (normalized) - on-resistance r ds(on) i d =1a www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 65906 s10-0543-rev. a, 08-mar-10 www.vishay.com 5 vishay siliconix SI8499DB typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0.4 0.5 0.6 0.7 0.8 0.9 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.08 0.10 0.12 012345 t j =25 c i d = - 1.5 a t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 5 10 15 20 25 30 power (w) pulse (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse limited by r ds(on) * bvdss limited 1ms 100 s 10 ms 1s,10s 100 ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d dc www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 6 document number: 65906 s10-0543-rev. a, 08-mar-10 vishay siliconix SI8499DB typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 4 8 12 16 20 0 25 50 75 100 125 150 package limited t c - case temperature (c) i d - drain current (a) power derating 0 3 6 9 12 15 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 65906 s10-0543-rev. a, 08-mar-10 www.vishay.com 7 vishay siliconix SI8499DB typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.1 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 0.05 single pulse www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 8 document number: 65906 s10-0543-rev. a, 08-mar-10 vishay siliconix SI8499DB package outline micro foot: 6-bump (2 x 3, 0.5 mm pitch) notes (unless otherwise specified): 1. all dimensions are in millimeters. 2. six (6) solder bumps are lead (pb)-fr ee 95.5sn, 3.8ag, 0.7cu with diameter ? 0.30 to 0.32 mm. 3. backside surface is coated with a ti/ni/ag layer. 4. non-solder mask defined copper landing pad. 5. is location of pin 1. notes: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65906 . e e e s s d d s g a b c 1 2 recommended land e e mark on backside of die s xxx 8 499 a a1 a2 s d e s s e 6 x ? 0.24 to 0.26 n ote 3 solder mask ~ ? 0.25 b u mp n ote 2 6 x ? b dim. millimeters a inches min. nom. max. min. nom. max. a 0.510 0.575 0.590 0.0201 0.0224 0.0232 a 1 0.220 0.250 0.280 0.0087 0.0098 0.0110 a 2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 d 0.920 0.960 1.000 0.0362 0.0378 0.0394 e 1.420 1.460 1.500 0.0559 0.0575 0.0591 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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